K9F2G16Q0M

FLASH MEMORY

Samsung semiconductor

K9F2G16Q0M Features

* Voltage Supply -1.8V device(K9F2GXXQ0M): 1.70V~1.95V -3.3V device(K9F2GXXU0M): 2.7 V ~3.6 V

* Organization - Memory Cell Array -X8 device(K9F2G08X0M) : (256M + 8,192K)bit x 8bit -X16 device(K9F2G16X0M) : (128M + 4,096K)bit x 16bit - Data Register -X8 device(K9F2G08X0M): (2K + 64)bi

K9F2G16Q0M General Description

Offered in 256Mx8bit or 128Mx16bit, the K9F2GXXX0M is 2G bit with spare 64M bit capacity. Its NAND cell provides the most costeffective solution for the solid state mass storage market. A program operation can be performed in typical 300µs on the 2112byte(X8 device) or 1056-word(X16 device) page and.

K9F2G16Q0M Datasheet (601.94 KB)

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K9F2G16Q0M

Manufacturer:

Samsung semiconductor

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601.94 KB

Description:

Flash memory.
K9F2G08Q0M K9F2G16Q0M K9F2G08U0M K9F2G16U0M Preliminary FLASH MEMORY Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History .

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K9F2G16Q0M FLASH MEMORY Samsung semiconductor

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K9F2G16Q0M Features

K9F2G16Q0M General Description

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