Datasheet Details
Part number:
K9F2G08U0M
Manufacturer:
Samsung semiconductor
File Size:
601.94 KB
Description:
FLASH MEMORY
Features
* Voltage Supply -1.8V device(K9F2GXXQ0M): 1.70V~1.95V -3.3V device(K9F2GXXU0M): 2.7 V ~3.6 V
* Organization - Memory Cell Array -X8 device(K9F2G08X0M) : (256M + 8,192K)bit x 8bit -X16 device(K9F2G16X0M) : (128M + 4,096K)bit x 16bit - Data Register -X8 device(K9F2G08X0M): (2K + 64)bi
K9F2G08U0M_Samsungsemiconductor.pdf
K9F2G08U0M, FLASH MEMORY
Offered in 256Mx8bit or 128Mx16bit, the K9F2GXXX0M is 2G bit with spare 64M bit capacity.
Its NAND cell provides the most costeffective solution for the solid state mass storage market.
A program operation can be performed in typical 300µs on the 2112byte(X8 device) or 1056-word(X16 device) page and
K9F2G08Q0M K9F2G16Q0M K9F2G08U0M K9F2G16U0M Preliminary FLASH MEMORY Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History 1.
Initial issue 1.
Add the Rp vs tr ,tf & Rp vs Ibusy graph for 1.8V device (Page 34) 2.
Add the data protection Vcc guidence for 1.8V device - below about 1.1V.
(Page 35) Draft Date Sep.
19.2001 Nov.
22.
2002 Remark Advance Preliminary 0.2 The min.
Vcc value 1.8V devices is changed.
K9F2GXXQ0M : Vcc 1.65V~1.95V
K9F2G08U0M Distributor
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