K9F8G08B0M Datasheet - Samsung Electronics

K9F8G08B0M FLASH MEMORY

Offered in 1Gx8bit, the K9F8G08X0M is a 8G-bit NAND Flash Memory with spare 256M-bit. The device is offered in 2.7V and 3.3V Vcc. Its NAND cell provides the most cost-effective solution for the solid state application market. A program operation can be performed in typical 200µs on the (4K+128)Byte .

K9KAG08U1M K9F8G08U0M K9F8G08B0M FLASH MEMORY www.DataSheet4U.com K9F8G08UXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For upd.

K9F8G08B0M Features

* Voltage Supply - 2.7V Device(K9F8G08B0M) : 2.5V ~ 2.9V - 3.3V Device(K9F8G08U0M) : 2.7V ~ 3.6V

* Organization - Memory Cell Array : (1G + 32M) x 8bit - Data Register : (4K + 128) x 8bit

* Automatic Program and Erase - Page Program : (4K + 128)Byte - Block Erase : (256K + 8K

K9F8G08B0M Datasheet (1.37 MB)