K9F8008W0M-TIB0 Datasheet (Samsung semiconductor)

K9F8008W0M-TIB0, 1M x 8 bit NAND Flash Memory

The K9F8008W0M is a 1M(1,048,576)x8bit NAND Flash Memory with a spare 32K(32,768)x8bit.

Its NAND cell provides the most cost-effective solution for the solid state mass storage market.

A program operation programs the 264-byte page in typically 250 µs and an erase operation can be performed in typic

K9F8008W0M-TCB0, K9F8008W0M-TIB0 Document Title 1M x 8 bit NAND Flash Memory FLASH MEMORY Revision History Revision No.

0.0 1.0 History Data Sheet 1997 Data Sheet 1998 1.

Changed tBERS parameter : 5ms(Typ.) → 2ms(Typ.) 10ms(Max.) → 4ms(Max.) 2.

Changed tPROG parameter : 1.5ms(Max.) → 1.0ms(Max.) Data sheet 1998 1.

Cjanged DC and Operating Characteristics Parameter Burst Read Operating Current Program Eraase Stand-by Current (CMOS) Input Leakage Current Output Leakage Current Vcc=2.7V~3.6V Typ

K9F8008W0M-TIB0 Features

* Voltage supply : 2.7V ~ 5.5V

* Organization - Memory Cell Array : (1M + 32K)bit x 8bit - Data Register : (256 + 8)bit x8bit

* Automatic Program and Erase(Typical) - Page Program : (256 + 8)Byte in 250µs - Block Erase : (4K + 128)Byte in 2ms - Status Register

* 264-B