K9F8G08UXM - FLASH MEMORY

Product Overview

Samsung Electronics

Part number	K9F8G08UXM
Manufacturer	Samsung Electronics
File Size	1.37 MB
Description	FLASH MEMORY
Datasheet	K9F8G08UXM Datasheet
Additional preview pages of the K9F8G08UXM datasheet.

Offered in 1Gx8bit, the K9F8G08X0M is a 8G-bit NAND Flash Memory with spare 256M-bit.

Voltage Supply - 2.7V Device(K9F8G08B0M) : 2.5V ~ 2.9V - 3.3V Device(K9F8G08U0M) : 2.7V ~ 3.6V.
Organization - Memory Cell Array : (1G + 32M) x 8bit - Data Register : (4K + 128) x 8bit.
Automatic Program and Erase - Page Program : (4K + 128)Byte - Block Erase : (256K + 8K)Byte.
Page Read Operation - Page Size : (4K + 128)Byte - Random Read : 25µs(Max. ) - Serial Access : 25ns(Min. ).
Fast Write Cycle Time - Page Program time : 200µs(Typ. ) - Block Erase.

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Published: Sep 13, 2010 |