K9K1208U0M Datasheet - Samsung semiconductor

K9K1208U0M 64M x 8 Bit NAND Flash Memory

Offered in 64Mx8bit or 32Mx16bit, the K9K12XXX0C is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200µs on the 528-.

K9K1208Q0C K9K1208D0C K9K1208U0C K9K1216Q0C K9K1216D0C K9K1216U0C FLASH MEMORY Document Title 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory Revision History Revision No. History 0.0 1.0 Initial issue. 1.Pin assignment of TBGA dummy ball is changed. (before) DNU > (after) N.C 2. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 34) 3. Add the data protection Vcc guidence for 1.8V device - below about 1.1V. (Page 35) 4. Add the specification of Block Lock scheme.(Page 29~3.

K9K1208U0M Features

* and specifications including FAQ, please refer to Samsung’s Flash web site. http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.htm The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifi

K9K1208U0M_Samsungsemiconductor.pdf (953.79 KB)