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KFW4G1612M-DEB5 - FLASH MEMORY

Datasheet Summary

Description

5.

Added CE don’t care state for Asynch Write, Load, Program, and Block Erase timing diagram 1.

Corrected Errata 2.

Features

  • including:.
  • A BootRAM and bootloader.
  • Two independent bi-directional 2KB DataRAM buffers.
  • A High-Speed x16 Host Interface.
  • On-chip Error Correction.
  • On-chip NOR interface controller This on-chip integration enables system designers to reduce external system logic and use high-density NAND Flash in.

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Datasheet Details

Part number KFW4G1612M-DEB5
Manufacturer Samsung semiconductor
File Size 1.76 MB
Description FLASH MEMORY
Datasheet download datasheet KFW4G1612M-DEB5 Datasheet
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Full PDF Text Transcription

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OneNAND4G(KFW4G16Q2M-DEB5) OneNAND2G(KFH2G16Q2M-DEB5) OneNAND1G(KFG1G16Q2M-DEB5) FLASH MEMORY www.DataSheet4U.com OneNANDTM Specification Density 1Gb 2Gb 4Gb Part No. KFG1G16Q2M-DEB5 KFH2G16Q2M-DEB5 KFW4G16Q2M-DEB5 VCC(core & IO) 1.8V(1.7V~1.95V) 1.8V(1.7V~1.95V) 1.8V(1.7V~1.95V) Temperature Extended Extended Extended PKG 63FBGA(LF) 63FBGA(LF) 63FBGA(LF) Version: Ver. 1.1 Date: July 20, 2005 1 OneNAND4G(KFW4G16Q2M-DEB5) OneNAND2G(KFH2G16Q2M-DEB5) OneNAND1G(KFG1G16Q2M-DEB5) FLASH MEMORY 1.0 INTRODUCTION This specification contains information about the Samsung Electronics Company OneNAND™‚ Flash memory product family. Section 1.0 includes a general overview, revision history, and product ordering information. Section 2.0 describes the OneNAND device. Section 3.
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