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KM718V987 Datasheet, Samsung semiconductor

KM718V987 Datasheet, Samsung semiconductor

KM718V987

datasheet Download (Size : 574.50KB)

KM718V987 Datasheet

KM718V987 sram equivalent, (km736v887 / km718v987) 256kx36 & 512kx18 synchronous sram.

KM718V987

datasheet Download (Size : 574.50KB)

KM718V987 Datasheet

Features and benefits


* Synchronous Operation.
* On-Chip Address Counter.
* Self-Timed Write Cycle.
* On-Chip Address and Control Registers.
* 3.3V+0.165V/-0.165V Power Sup.

Application

GW, BW, LBO, ZZ. Write cycles are internally self-timed and synchronous. Full bus-width write is done by GW, and each b.

Description

The KM736V887 and KM718V987 are 9,437,184-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System. It is organized as 256K(512K) words of 36(18) bits and integrates address and.

Image gallery

KM718V987 Page 1 KM718V987 Page 2 KM718V987 Page 3

TAGS

KM718V987
KM736V887
KM718V987
256Kx36
512Kx18
Synchronous
SRAM
Samsung semiconductor

Manufacturer


Samsung semiconductor

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