SW630
SW630 is N-Channel MOSFET manufactured by Samwin.
Description
Features
N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 200 V : 0.4 ohm : 9.0 A : 26 nc : 72 W
This power MOSFET is produced in CHMC with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and SMPS. It’s typical application is TV and monitor. D w w w
.
D a t a
S h e e t
. c o m
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGS EAS EAR dv/dt PD TSTG,TJ TL Drain to Source Voltage Continuous Drain Current (@Tc=25℃) Continuous Drain Current (@Tc=100℃) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (@Tc=25℃) Derating Factor above 25℃ Operating junction temperature &Storage temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. (Note 2) (Note 1) (Note 3) (Note 1)
Parameter
Value
200 9 6.8 36 ±30 160 7.2 5.0 72 0.57 -55~+150 300
Units
V A A A V m J m J V/ns W W/℃ ℃ ℃
Thermal Characteristics
Value Symbol
RθJC RθCS RθJA
Units Max
1.73 62.5 ℃/ W ℃/ W ℃/ W
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient
Min
- Typ
- 1/6
REV0.1
SAMWIN
Electrical Characteristics
Symbol Off Characteristics
BVDSS △BVDSS/△ Tj Drain- Source Breakdown Voltage Breakdown Voltage Temperature coefficient Drain-Source Leakage Current Gate-Source Leakage Current IGSS .. Gate-Source Leakage Reverse VGS=0V,ID=250u A ID=250u A,referenced to 25℃ VDS=200V, VGS=0V IDSS VDS=160V, Tc=125℃ VGS=30V,VDS=0V VGS=-30V, VDS=0V 200 (Tc=25℃ unless otherwise noted)
Value Test Conditions Min Typ Max Unit s
Parameter
- V V/℃
- 1 100 -100 u A n A n...
