• Part: SWD100N03
  • Manufacturer: Samwin
  • Size: 601.10 KB
Download SWD100N03 Datasheet PDF
SWD100N03 datasheet preview
SWD100N03 page 2
Page 2
SWD100N03 page 3
Page 3

SWD100N03 Key Features

  • High ruggedness
  • RDS(ON) (Max 5.3mΩ)@VGS=10V
  • Gate Charge (Typ 146nC)
  • Improved dv/dt Capability
  • 100% Avalanche Tested 1

Related Samwin Datasheets

Part Number Description
SWD19N10 N-Channel MOSFET
SWD1N60 N-Channel MOSFET

SWD100N03 Description

This N-channel enhancement mode field-effect power transistor using SAMWIN semiconductor’s advanced planar stripe, DMOS technology intended for battery Operated systems like a DC-DC converter motor control , ups ,audio amplifier. Also, especially designed to minimize RDS(ON), low gate charge and high rugged avalanche characteristics. Thermal characteristics Symbol Rthjc Rthcs Rthja Parameter Min.