SWD19N10 Datasheet | Samwin

.Data Sheet.co.kr SAMWIN SW19N10 N-channel MOSFET Features - High ruggedness - RDS(ON) (Max 0.1Ω)@VGS=10V - Gate Charge (Typ 100n C) - Improved dv/dt Capability - 100% Avalanche Tested TO-220 TO-252 BVDSS : 100V ID : 17A RDS(ON) : 0.1 ohm 1 1 2 3 2 3 2 1. Gate 2. Drain 3. Source General Description This N-channel enhancement mode field-effect power transistor using SAMWIN semiconductor’s advanced planar stripe, DMOS technology intended for battery Operated systems like a DC-DC converter motor control , ups ,audio amplifier. Also, especially designed to minimize RDS(ON), low gate charge and high rugged avalanche characteristics. Order Codes Item 1 2 Sales Type SW P 19N10 SW D 19N10 Marking SW19N10 SW19N10 Package TO-220 TO-252 Packaging TUBE...