SWD19N10 Overview
This N-channel enhancement mode field-effect power transistor using SAMWIN semiconductor’s advanced planar stripe, DMOS technology intended for battery Operated systems like a DC-DC converter motor control , ups ,audio amplifier. Also, especially designed to minimize RDS(ON), low gate charge and high rugged avalanche characteristics. Thermal characteristics Symbol Rthjc Rthcs Rthja Mar.
SWD19N10 Key Features
- High ruggedness
- RDS(ON) (Max 0.1Ω)@VGS=10V
- Gate Charge (Typ 100nC)
- Improved dv/dt Capability
- 100% Avalanche Tested