SWD19N10 - N-Channel MOSFET

Description

This N-channel enhancement mode field-effect power transistor using SAMWIN semiconductor’s advanced planar stripe, DMOS technology intended for battery Operated systems like a DC-DC converter motor control , ups ,audio amplifier.

Features

High ruggedness.
RDS(ON) (Max 0.1Ω)@VGS=10V.
Gate Charge (Typ 100nC).
Improved dv/dt Capability.
100% Avalanche Tested TO-220 TO-252 BVDSS : 100V ID : 17A RDS(ON) : 0.1 ohm 1 1 2 3 2 3 2 1. Gate 2. Drain 3. Source 1 General.

Samwin

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Datasheet Details

Part number	SWD19N10
Manufacturer	Samwin
File Size	849.53 KB
Description	N-Channel MOSFET
Datasheet	SWD19N10 Datasheet

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Full PDF Text Transcription

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www.DataSheet.co.kr SAMWIN SW19N10 N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 0.1Ω)@VGS=10V ■ Gate Charge (Typ 100nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-220 TO-252 BVDSS : 100V ID : 17A RDS(ON) : 0.1 ohm 1 1 2 3 2 3 2 1. Gate 2. Drain 3. Source 1 General Description This N-channel enhancement mode field-effect power transistor using SAMWIN semiconductor’s advanced planar stripe, DMOS technology intended for battery Operated systems like a DC-DC converter motor control , ups ,audio amplifier. Also, especially designed to minimize RDS(ON), low gate charge and high rugged avalanche characteristics.

Published: Mar 5, 2012 |