SWD100N03 Description
This N-channel enhancement mode field-effect power transistor using SAMWIN semiconductor’s advanced planar stripe, DMOS technology intended for battery Operated systems like a DC-DC converter motor control , ups ,audio amplifier. Also, especially designed to minimize RDS(ON), low gate charge and high rugged avalanche characteristics. Thermal characteristics Symbol Rthjc Rthcs Rthja Parameter Min.
SWD100N03 Key Features
- High ruggedness
- RDS(ON) (Max 5.3mΩ)@VGS=10V
- Gate Charge (Typ 146nC)
- Improved dv/dt Capability
- 100% Avalanche Tested 1