Datasheet Details
| Part number | SWD19N10 |
|---|---|
| Manufacturer | Samwin |
| File Size | 849.53 KB |
| Description | N-Channel MOSFET |
| Datasheet | SWD19N10_Samwin.pdf |
|
|
Overview: www.DataSheet.co.kr SAMWIN SW19N10 N-channel MOSFET.
| Part number | SWD19N10 |
|---|---|
| Manufacturer | Samwin |
| File Size | 849.53 KB |
| Description | N-Channel MOSFET |
| Datasheet | SWD19N10_Samwin.pdf |
|
|
|
This N-channel enhancement mode field-effect power transistor using SAMWIN semiconductor’s advanced planar stripe, DMOS technology intended for battery Operated systems like a DC-DC converter motor control , ups ,audio amplifier.
Also, especially designed to minimize RDS(ON), low gate charge and high rugged avalanche characteristics.
3 Order Codes Item 1 2 Sales Type SW P 19N10 SW D 19N10 Marking SW19N10 SW19N10 Package TO-220 TO-252 Packaging TUBE REEL Absolute maximum ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current (@TC=25oC) Continuous Drain Current Drain current pulsed Gate to Source Voltage Single pulsed Avalanche Energy Repetitive Avalanche Energy Peak diode Recovery dv/dt Total power dissipation (@TC Derating Factor above 25oC =25oC) (note 2) (note 1) (note 3) (@TC=100oC) (note 1) Parameter Value 100 17 11 68 ± 25 215 7.5 6.0 62.5 0.5 -55 ~ + 150 300 Unit V A A A V mJ mJ V/ns W W/oC oC oC Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds.
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