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STW80H150C - SCHOTTKY RECTIFIER

Key Features

  • 175 °C TJ operation.
  • Ultralow forward voltage drop.
  • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance.
  • High frequency operation.
  • Guard ring for enhanced ruggedness and long term reliability.
  • Trench MOS Schottky technology.
  • This is a Pb.
  • Free Device.
  • All SMC parts are traceable to the wafer lot.
  • Additional testing can be offered upon request.

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Datasheet Details

Part number STW80H150C
Manufacturer Sangdest Microelectronics
File Size 214.83 KB
Description SCHOTTKY RECTIFIER
Datasheet download datasheet STW80H150C Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Technical Data Data Sheet N1897, Rev.