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FKI06190 - Power MOSFET

Key Features

  • V(BR)DSS --------------------------------- 60 V (ID = 100 µA).
  • ID ---------------------------------------------------------- 30 A.
  • RDS(ON) -------- 16.5 mΩ max. (VGS = 10 V, ID = 19.8 A).
  • Qg------- 9.1 nC (VGS = 4.5 V, VDS = 30 V, ID = 19.8 A) Package TO-220F.
  • Low Total Gate Charge.
  • High Speed Switching.
  • Low On-Resistance.
  • Capable of 4.5 V Gate Drive.
  • 100 % UIL Tested.
  • RoHS Compliant.

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Full PDF Text Transcription for FKI06190 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for FKI06190. For precise diagrams, and layout, please refer to the original PDF.

60 V, 30 A, 12.1 mΩ Low RDS(ON) N ch Trench Power MOSFET FKI06190 Features  V(BR)DSS --------------------------------- 60 V (ID = 100 µA)  ID --------------------------...

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------------------- 60 V (ID = 100 µA)  ID ---------------------------------------------------------- 30 A  RDS(ON) -------- 16.5 mΩ max. (VGS = 10 V, ID = 19.8 A)  Qg------- 9.1 nC (VGS = 4.5 V, VDS = 30 V, ID = 19.8 A) Package TO-220F  Low Total Gate Charge  High Speed Switching  Low On-Resistance  Capable of 4.

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