Datasheet Summary
60 V, 30 A, 12.1 mΩ Low RDS(ON) N ch Trench Power MOSFET
Features
- V(BR)DSS --------------------------------- 60 V (ID = 100 µA)
- ID ---------------------------------------------------------- 30 A
- RDS(ON) -------- 16.5 mΩ max. (VGS = 10 V, ID = 19.8 A)
- Qg------- 9.1 nC (VGS = 4.5 V, VDS = 30 V, ID = 19.8 A)
Package
TO-220F
- Low Total Gate Charge
- High Speed Switching
- Low On-Resistance
- Capable of 4.5 V Gate Drive
- 100 % UIL Tested
- RoHS pliant
Applications
- DC-DC converters
- Synchronous Rectification
(1) (2) (3) s G D S Design Equivalent circuit
Not to scale or New
- Power Supplies
D(2) G(1)
S(3) ded f...
