FKI06190 Datasheet and Specifications PDF

60 V, 30 A, 12.1 mΩ Low RDS(ON) N ch Trench Power MOSFET FKI06190 Features  V(BR)DSS --------------------------------- 60 V (ID = 100 µA)  ID -------------------------------------------------------.

* V(BR)DSS
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*- 60 V (ID = 100 µA)
* ID
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* 30 A
* RDS(ON)
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* 16.5 mΩ max. (VGS = 10 V, ID = 19.8 A)
* Qg
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*- 9.1 nC (VGS = 4.5 V, VDS = 30 V, ID = 19.8 A) Package TO-220F
* Low Total Gate Charge
* High S.

·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source .

*Drain Current
*ID=30A@ TC=25℃
*Drain Source Voltage- : VDSS=60V(Min)
*Static Drain-Source On-Resistance : RDS(on) =16.5mΩ(Max)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
*Designed for use in switch mode power supplies and .