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SHD4102 Datasheet Preview

SHD4102 Datasheet

Power MOSFET

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100 V, 10 A, 50
N-channel Power MOSFET Module
SHD4102
Data Sheet
Description
The SHD4102 includes four N-channel power
MOSFETs in its small HSON package. The internal
power MOSFETs have Zener diodes between gates and
sources, thus requiring no externally clamped circuit for
an injection coil drive circuit. Supplied in a low thermal
resistance package, the product achieves high
performance in heat dissipation.
Features
Suitable for High Reliability Applications
Complies with Automotive Quality Requirements
AEC-Q101 Qualified
Bare Lead Frame: Pb-free (RoHS Compliant)
Built-in Zener Diodes between Gates and Sources
Low On-resistance
Specifications (Q1 to Q4)
V(BR)DSS ---------------------------------100 V (ID = 100 μA)
ID ---------------------------------------------------------- 10 A
RDS(ON) ---------------- 50 mΩ max. (ID = 5 A, VGS = 10 V)
Typical Application
Solenoid Injection System
Package
HSON-20
Not to scale
Internal Schematic Diagram
DD
14 13
DD
12 11
G 15
D 16
S 17
S 18
D 19
G 20
Q4
Q3
Q1
Q2
10 G
9D
8S
7S
6D
5G
SHD4101
DC/DC
Control
SHD4102
D: Drain
S: Source
G: Gate
12
DD
34
DD
Applications
Injection Coil Driver Circuits
SHD4102-DSE Rev.1.1
SANKEN ELCTRIC CO., LTD.
1
Oct. 31, 2018
https://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2016




Sanken

SHD4102 Datasheet Preview

SHD4102 Datasheet

Power MOSFET

No Preview Available !

SHD4102
Absolute Maximum Ratings
Unless otherwise specified, TA = 25 °C.
Parameter
Symbol
Drain-to-Source Voltage
VDS
Gate-to-Source Voltage
VGS
Continuous Drain Current
ID
Pulsed Drain Current
IDM
Single Pulse Avalanche Energy
EAS
Avalanche Current
Drain-to-Source dv/dt 1
Peak Diode Recovery dv/dt 2
Peak Diode Recovery di/dt
IAS
dv/dt 1
dv/dt 2
di/dt
Power Dissipation
PD
Junction Temperature
TJ
Storage Temperature
TSTG
Conditions
TC = 25 °C
t 30 µs, duty cycle 1 %
VDD = 14 V, L = 1.08 mH,
ID = 10 A, unclamped,
RG = 50 Ω;
see Figure 16
See Figure 16
See Figure 17
See Figure 17
TC = 25 °C, all elements operating;
mounted on an FR4 board (26 mm
× 36 mm × 1.66 mm)
TC = 25 °C, all elements operating;
with an infinite heatsink
Rating
100
±20
10
30
62.5
10
0.6
5
100
1.7
80
150
55 to 150
Unit
V
V
A
A
mJ
A
V/ns
V/ns
A/µs
W
W
°C
°C
Thermal Characteristics
Parameter
Thermal Resistance
(Junction-to-Case)
Symbol
RθJC
Conditions
TC = 25 °C, all elements operating;
with an infinite heatsink
Min.
Typ.
Max.
6.25
Unit
°C/W
SHD4102-DSE Rev.1.1
SANKEN ELCTRIC CO., LTD.
2
Oct. 31, 2018
https://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2016


Part Number SHD4102
Description Power MOSFET
Maker Sanken
PDF Download

SHD4102 Datasheet PDF






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