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STA461C Datasheet Preview

STA461C Datasheet

Power Transistor Array

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Power Transistor Array STA461C
Absolute Maximum Ratings (Ta=25ºC)
Symbol
Ratings
Unit
VCBO
65±5 V
VCEO
65±5 V
VEBO
6V
IC
±6 (pulse ±10)
A
IB 1 A
PT
3.2 (Ta = 25ºC)
W
18 (Tc = 25ºC)
W
Tj 150 ºC
Tstg
–55 to +150
ºC
Electrical Characteristics
Symbol
ICBO
IEBO
VCEO
hFE
VCE (sat)
VFEC
Es/b
Test Conditions
VCB = 60V
VEB = 6V
IC = 50mA
VCE = 1V, IC = 1A
IC = 1.5A, IB = 15mA
IFEC = 6A
L = 10mH, single pulse
Ratings
10max
10max
60 to 70
400 to 1500
0.15max
1.5max
80min
(Ta = 25ºC)
Unit
µA
µA
V
V
V
mJ
Typical Switching Characteristics
VCC RL
(V) ()
12 12
IC VBB1 VBB2 IB1 IB2 ton tstg tf
(A) (V) (V) (mA) (mA) (µs) (µs) (µs)
1 10 –5 30 –30 0.2 3.9 0.2
External Dimensions STA4 (LF400B)
25.25±0.2
b
a
1.0±0.25
0.5±0.15
9 • 2.54=22.86±0.05
C1.5±0.5±
(2.54)
1 2 3 4 5 6 7 8 9 10
BCE
B CE
a) Type No.
b) Lot No.
(Unit: mm)
s IC — VCE Characteristics (typ.)
7
30mA
6 20mA
10mA
5
4 5mA
3
3mA
2
1 IB = 1mA
0
0 1234 5
VCE (V)
s VCE (sat) — IC Temperature Characteristics (typ.)
0.75
IC/ IB = 100
s IC — VBE Temperature Characteristics (typ.)
6 (VCE = 1V)
5
0.5
Ta = –55ºC
25ºC
75ºC
0.25 125ºC
4 Ta = 125ºC
75ºC
3 25ºC
–55ºC
2
0
0.01
0.1
1
IC (A)
10
1
0
0 0.5 1.0 1.5
VBE (V)
s hFE — IC Temperature Characteristics (typ.)
2000
(VCE = 1V)
1000
500
100
50
0.01
Ta = 125ºC
75ºC
25ºC
–55ºC
0.1
IC (A)
1
10
s ton• tstg •tf — IC Characteristics
5
tstg
VCC = 12V
1 IB1 = –IB2 = 30mA
0.5
0.1
0
tf
ton
1
Ic (A)
2
s j-a — t Characteristics
10
5 Single pulse
1
0.5
0.1
0.05
3
0.1 1
10 100
t (ms)
2000
s Safe Operating Area (single pulse)
20
10
5
1
0.5
0.1
1
Without heatsink
natural air cooling
5 10
VCE (V)
50 100
s PT — Ta Derating
20
15
10
5
Without heatsink
0
0 50 100
Ta (ºC)
150
Equivalent Circuit Diagram
38
27
49
65


Part Number STA461C
Description Power Transistor Array
Maker Sanken
Total Page 1 Pages
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