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2SC5124
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC5124 1500 800 6 10(Pulse20) 5 100(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
Application : Display Horizontal Deflection Output, Switching Regulator and General Purpose
(Ta=25°C) 2SC5124 100max 1max 100max 800min 8min 4t o9 5max 1.5max 3typ 130typ Unit µA mA µA V
sElectrical Characteristics
Symbol ICBO1 ICBO2 IEBO V(BR)CEO hFE1 hFE2 VCE(sat) VBE(sat) fT COB Conditions VCB=1200V VCB=1500V VEB=6V IC=10mA VCE=5V, IC=1A VCE=5V, IC=8A IC=8A, IB=2A IC=8A, IB=2A VCE=12V, IE=–1A VCB=10V, f=1MHz
External Dimensions FM100(TO3PF)
0.8±0.2 15.6±0.2 5.5±0.2 3.45 ±0.2 5.5 ø3.3±0.2 1.6
23.0±0.3
9.5±0.2
a b
V V MHz pF
19.1 16.
C5124 Datasheet
