Datasheet Summary
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5122
High-Voltage switching Applications
2SC5122
Unit: mm
- High breakdown voltage: VCEO = 400 V
- Low saturation voltage: VCE (sat) = 0.4 V (typ.)
(IC = 20 mA, IB = 0.5...
- Part: C5122
- Description: 2SC5122
- Manufacturer: Toshiba
- Size: 105.93 KB
Other C5122 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Nippon Precision Circuits |
C5122 | CB Transceiver PLL |