C5122 Overview
TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5122 High-Voltage switching Applications 2SC5122 Unit: mm High breakdown voltage: VCEO = 400 V Low saturation voltage:.
Datasheet Details
| Part number | C5122 |
|---|---|
| Datasheet | C5122-Toshiba.pdf |
| File Size | 105.93 KB |
| Manufacturer | Toshiba |
| Description | 2SC5122 |
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