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C5128 - 2SC5128

Key Features

  • q High-speed switching q High collector to base voltage VCBO q Wide area of safe operation (ASO) q Full-pack package with outstanding insulation, which can be in- stalled to the heat sink with one screw s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C VCBO VCES VCEO VEBO ICP IC IB PC 800 800 50.

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Power Transistors 2SC5128 www.DataSheet4U.com Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm s Features q High-speed switching q High collector to base voltage VCBO q Wide area of safe operation (ASO) q Full-pack package with outstanding insulation, which can be in- stalled to the heat sink with one screw s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C VCBO VCES VCEO VEBO ICP IC IB PC 800 800 500 8 10 5 3 40 2 Junction temperature Storage temperature Tj 150 Tstg –55 to +150 Unit V V V V A A A W ˚C ˚C +0.5 13.7–0.2 15.0±0.3 9.