The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
2SC5124
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC5124 1500 800 6 10(Pulse20) 5 100(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
Application : Display Horizontal Deflection Output, Switching Regulator and General Purpose
(Ta=25°C) 2SC5124 100max 1max 100max 800min 8min 4t o9 5max 1.5max 3typ 130typ Unit µA mA µA V
sElectrical Characteristics
Symbol ICBO1 ICBO2 IEBO V(BR)CEO hFE1 hFE2 VCE(sat) VBE(sat) fT COB Conditions VCB=1200V VCB=1500V VEB=6V IC=10mA VCE=5V, IC=1A VCE=5V, IC=8A IC=8A, IB=2A IC=8A, IB=2A VCE=12V, IE=–1A VCB=10V, f=1MHz
External Dimensions FM100(TO3PF)
0.8±0.2 15.6±0.2 5.5±0.2 3.45 ±0.2 5.5 ø3.3±0.2 1.6
23.0±0.3
9.5±0.2
a b
V V MHz pF
19.1 16.
C5124 Datasheet
