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2SC5239
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC5239 900 550 7 3(Pulse6) 1.5 50(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
Application : Switching Regulator and General Purpose
(Ta=25°C) 2SC5239 100max 100max 550min 10 to 30 0.5max 1.2max 6typ 35typ V MHz pF
2.5 B C E 12.0min 4.0max
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=1A IC=1A, IB=0.2A IC=1A, IB=0.2A VCE=12V, IE=–0.25A VCB=10V, f=1MHz
External Dimensions MT-25(TO220)
3.0±0.2 10.2±0.2 4.8±0.2 2.0±0.1
Unit
µA µA
V
16.0±0.7 8.8±0.2
a b
ø3.75±0.2
V
1.35
0.65 +0.2 -0.1 2.5 1.
C5239 Datasheet
