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MGD623N Datasheet IGBT

Manufacturer: Sanken

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General Description

The MGD623N is 600 V trench IGBT.

Sanken original trench structure decreases gate capacitance, and achieves high speed switching and switching loss reduction.

Thus, the IGBT can improve the efficiency of your circuit.

Overview

VCE = 600 V, IC = 37 A Trench IGBT with Fast Recovery Diode MGD623N Data.

Key Features

  • Low Saturation Voltage.
  • High Speed Switching.
  • With Integrated Low VF Fast Recovery Diode.
  • Bare Lead Frame: Pb-free (RoHS Compliant).
  • VCE ------------------------------------------------------ 600 V.
  • IC (TC = 100 °C) ----------------------------------------- 37 A.
  • VCE(sat)-----------------------------------------------1.7 V typ.
  • tf (TJ = 25 °C)------------------------------------ 200 ns typ.
  • VF----------------------------------------------------1.2.

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