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MGD623S - IGBT

General Description

The MGD623S is 600 V trench IGBT.

Sanken original trench structure decreases gate capacitance, and achieves high speed switching and switching loss reduction.

Thus, the IGBT can improve the efficiency of your circuit.

Key Features

  • Low Saturation Voltage.
  • High Speed Switching.
  • With Integrated Low VF Fast Recovery Diode.
  • Bare Lead Frame: Pb-free (RoHS Compliant).
  • VCE ------------------------------------------------------ 600 V.
  • IC (TC = 100 °C) ----------------------------------------- 37 A.
  • VCE(sat)-----------------------------------------------1.8 V typ.
  • tf (TJ = 25 °C) ------------------------------------ 120 ns typ.
  • VF----------------------------------------------------1.2.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VCE = 600 V, IC = 37 A Trench IGBT with Fast Recovery Diode MGD623S Data Sheet Description The MGD623S is 600 V trench IGBT. Sanken original trench structure decreases gate capacitance, and achieves high speed switching and switching loss reduction. Thus, the IGBT can improve the efficiency of your circuit. Features ● Low Saturation Voltage ● High Speed Switching ● With Integrated Low VF Fast Recovery Diode ● Bare Lead Frame: Pb-free (RoHS Compliant) ● VCE ------------------------------------------------------ 600 V ● IC (TC = 100 °C) ----------------------------------------- 37 A ● VCE(sat)-----------------------------------------------1.8 V typ. ● tf (TJ = 25 °C) ------------------------------------ 120 ns typ. ● VF----------------------------------------------------1.2 V typ.