MGD623N
Overview
The MGD623N is 600 V trench IGBT. Sanken original trench structure decreases gate capacitance, and achieves high speed switching and switching loss reduction.
- Low Saturation Voltage
- High Speed Switching
- With Integrated Low VF Fast Recovery Diode
- Bare Lead Frame: Pb-free (RoHS Compliant)
- VCE 600 V
- IC (TC = 100 °C) 37 A
- VCE(sat) 1.7 V typ.
- tf (TJ = 25 °C) 200 ns typ.
- VF 1.2 V typ.
