MGD623N Overview
The MGD623N is 600 V trench IGBT. Sanken original trench structure decreases gate capacitance, and achieves high speed switching and switching loss reduction. Thus, the IGBT can improve the efficiency of your circuit.
MGD623N Key Features
- Low Saturation Voltage
- High Speed Switching
- With Integrated Low VF Fast Recovery Diode
- Bare Lead Frame: Pb-free (RoHS pliant)
- VCE ------------------------------------------------------ 600 V
- IC (TC = 100 °C) ----------------------------------------- 37 A
- VCE(sat)-----------------------------------------------1.7 V typ
- tf (TJ = 25 °C)------------------------------------ 200 ns typ
- VF----------------------------------------------------1.2 V typ