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2SA2098 - PNP / NPN Epitaxial Planar Silicon Transistors

Key Features

  • 18.1 16.0 Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. 3.5 7.2 5.6 14.0 1.6 1.2 0.75 2.4 0.7 2.55 1 2 3 2.55 2.4 Specifications ( ) : 2SA2098 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Stora.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENN7495 2SA2098 / 2SC5887 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2098 / 2SC5887 High-Current Switching Applications Applications • Package Dimensions unit : mm 2041A [2SA2098 / 2SC5887] 10.0 3.2 4.5 2.8 Relay drivers, lamp drivers, motor drivers. Features • • • • 18.1 16.0 Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. 3.5 7.2 5.6 14.0 1.6 1.2 0.75 2.4 0.7 2.55 1 2 3 2.55 2.