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2SA2222SG - PNP Epitaxial Planar Silicon Transistor

Key Features

  • Adoption of MBIT process.
  • Large current capacitance (IC=--10A).
  • Low collector-to-emitter saturation voltage (VCE(sat)=--250mV(typ. )).
  • High-speed switching (tf=22ns(typ. )) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP I.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA1799 2SA2222SG SANYO Semiconductors DATA SHEET 2SA2222SG PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications Applications • Relay drivers, lamp drivers, motor drivers Features • Adoption of MBIT process • Large current capacitance (IC=--10A) • Low collector-to-emitter saturation voltage (VCE(sat)=--250mV(typ.)) • High-speed switching (tf=22ns(typ.