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2SA2222SG - Bipolar Transistor

Key Features

  • Adoption of MBIT process.
  • Large current capacity (IC=--10A).
  • Low collector-to-emitter saturation voltage (VCE(sat)=--250mV(typ. )).
  • High-speed switching (tf=22ns(typ. )) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature VCBO VCEO VEBO IC ICP IB PC Tj Storage.

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Datasheet Details

Part number 2SA2222SG
Manufacturer onsemi
File Size 179.96 KB
Description Bipolar Transistor
Datasheet download datasheet 2SA2222SG Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA1799B 2SA2222SG Bipolar Transistor –50V, –10A, Low VCE(sat) PNP TO-220F-3FS http://onsemi.com Applications • Relay drivers, lamp drivers, motor drivers Features • Adoption of MBIT process • Large current capacity (IC=--10A) • Low collector-to-emitter saturation voltage (VCE(sat)=--250mV(typ.)) • High-speed switching (tf=22ns(typ.