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isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SA2222
DESCRIPTION ·Large current capacitance ·High speed switching ·Low saturation voltage ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Relay drivers,lamp drivers,motor drivers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-50
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-10
A
ICM
Collector Current-Peak
Collector Power Dissipation
PC
@ TC=25℃ Collector Power Dissipation
@Ta=25℃
TJ
Junction Temperature
-13
A
20 W
2
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc website:www.iscsemi.