* Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Co
2SC6098
Sanyo
97.03 KB
Npn epitaxial planar silicon transistor.
Ordering number : ENA0413 2SC6098 2SC6098 Applications NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications DC /.
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