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2SC6098 - Silicon NPN Power Transistor

General Description

Large current capacitance High-speed switching High allowable power dissipation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter ABS

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isc Silicon NPN Power Transistor DESCRIPTION ·Large current capacitance ·High-speed switching ·High allowable power dissipation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6.5 V IC Collector Current-Continuous 2.5 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @Ta=25℃ TJ Junction Temperature 4 A 15 W 0.8 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC6098 isc website：www.iscsemi.