Datasheet Details
| Part number | 2SC6099 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 250.62 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SC6099-InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC6099.
| Part number | 2SC6099 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 250.62 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SC6099-InchangeSemiconductor.pdf |
|
|
|
·Large current capacitance ·High-speed switching ·High allowable power dissipation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6.5 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @Ta=25℃ TJ Junction Temperature 3 A 15 W 0.8 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC6099 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 1A;
IB= 100mA 0.165 V VBE(sat) Base-Emitter Saturation Voltage IC= 1A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC6099 | Bipolar Transistor | ON Semiconductor |
 |
2SC6099 | NPN Epitaxial Planar Silicon Transistor | Sanyo Semicon Device |
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