The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC6097
DESCRIPTION ·Large current capacitance ·High-speed switching ·High allowable power dissipation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers,
inverter
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
100
V
60
V
6.5
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Peak
IB
Base Current-Continuous
Collector Power Dissipation
@ TC=25℃
PC
Collector Power Dissipation
@Ta=25℃
TJ
Junction Temperature
5
A
0.6
A
15 W
0.