30C01SS transistor equivalent, npn epitaxial planar silicon transistor.
* Large current capacitance.
* Low collector-to-emitter saturation voltage(resistance).
RCE(sat) typ=0.70Ω[IC=0.4A, IB=20mA].
* Ultrasmall and thin flat lead .
Applications
* Low-frequency Amplifier, muting circuit.
Package Dimensions
unit : mm 2159A
Features
* Large c.
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