* Large current capacitance.
* Low collector-to-emitter saturation voltage (resistance). RCE(sat) typ=330mΩ[IC=0.7A, IB=35mA].
* Ultrasmall package facilitates miniaturization in end products.
* Small ON-resistance (Ron). 0.2 [30C02CH] 2.9 0.4 3 0.15 0.05 0.6 1.6
30C02CH
Sanyo
44.51 KB
Npn epitaxial planar silicon transistor.
Ordering number : ENN7363 30C02CH NPN Epitaxial Planar Silicon Transistor 30C02CH Low-Frequency General-Purpose Amplifier Applications Application.
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