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30C02MH - NPN Epitaxial Planar Silicon Transistor

Datasheet Summary

Features

  • Large current capacitance.
  • Low collector-to-emitter saturation voltage (resistance) : RCE(sat) typ=330mΩ [IC=0.7A, IB=35mA].
  • Ultrasmall package facilitates miniaturization in end products.
  • Small ON-resistance (Ron). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperat.

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Datasheet Details

Part number 30C02MH
Manufacturer Sanyo
File Size 237.90 KB
Description NPN Epitaxial Planar Silicon Transistor
Datasheet download datasheet 30C02MH Datasheet
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Full PDF Text Transcription

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Ordering number : EN7364A 30C02MH SANYO Semiconductors DATA SHEET 30C02MH NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amplifier Applications Applications • Low-frequency Amplifier, high-speed switching, small motor drive. Features • Large current capacitance. • Low collector-to-emitter saturation voltage (resistance) : RCE(sat) typ=330mΩ [IC=0.7A, IB=35mA]. • Ultrasmall package facilitates miniaturization in end products. • Small ON-resistance (Ron).
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