30C02SS transistor equivalent, npn epitaxial planar silicon transistor.
* Large current capacitance.
* Low collector-to-emitter saturation voltage (resistance).
RCE(sat) typ=330mΩ[IC=0.7A, IB=35mA].
* Ultrasmall package facilitate.
Applications
* Low-frequency Amplifier, high-speed switching, small motor drive.
Package Dimensions
unit : mm 2159.
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