* Large current capacitance.
* Low collector-to-emitter saturation voltage (resistance). RCE(sat) typ=330mΩ[IC=0.7A, IB=35mA].
* Ultrasmall package facilitates miniaturization in end products.
* Small ON-resistance (Ron). Top View 1.4 0.25 3 12 0.45 0.2 0.3 0.8 0.3
30C02SS
Sanyo
29.99 KB
Npn epitaxial planar silicon transistor.
Ordering number : ENN7367 30C02SS NPN Epitaxial Planar Silicon Transistor 30C02SS Low-Frequency General-Purpose Amplifier Applications Application.
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