A1435 - 2SA1435

Features

Adoption of MBIT process.
High DC current gain (hFE=500 to 1200).
Large current capacity.
Low colletor-to-emitter saturation voltage (VCE(sat)≤0.5V max).
High VEBO (VEBO≥15V). Package Dimensions unit:mm 2003A [2SA1435] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperatur.

A1435 2SA1435 by Sanyo - Datasheet Preview — Datasheet preview – A1435

Datasheet Details

Part number	A1435
Manufacturer	SANYO (now Panasonic)
File Size	79.48 KB
Description	2SA1435
Datasheet	A1435 Datasheet
Additional preview pages of the A1435 datasheet.

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Full PDF Text Transcription

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Ordering number:EN1856A PNP Epitaxial Planar Silicon Transistor 2SA1435 High hFE, AF Amplifier Applications Applications · Low frequency general-purpose amplifiers, drivers, muting circuits. Features · Adoption of MBIT process. · High DC current gain (hFE=500 to 1200). · Large current capacity. · Low colletor-to-emitter saturation voltage (VCE(sat)≤0.5V max). · High VEBO (VEBO≥15V).

Published: May 10, 2015 |