C3896 transistor equivalent, npn triple diffused planar silicon transistor.
* High speed (tf=100ns typ).
* High reliability (Adoption of HVP process).
* High breakdown voltage (VCBO=1500V).
* Adoption of MBIT process.
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Features
* High speed (tf=100ns typ).
* High reliability (Adoption of HVP process).
* High breakdown voltag.
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