C3808
Features
- Large current capacity (IC=2A).
- Adoption of MBIT process.
- High DC current gain (h FE=800 to 3200).
- Low collector-to-emitter saturation voltage
(VCE(sat)≤0.5V).
- High VEBO (VEBO≥15V).
Package Dimensions unit:mm 2043A
[2SC3808]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation
Symbol
VCBO VCEO VEBO
IC ICP PC
Junction Temperature Storage Temperature
Tj Tstg
Tc=25˚C
Conditions
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Collector Cutoff Current Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product Output Capacitance
ICBO IEBO h FE1 h FE2 f T Cob
VCB=50V, IE=0 VEB=10V, IC=0 VCE=5V, IC=500m A VCE=5V, IC=1A VCE=10V, IC=50m A VCB=10V, f=1MHz
B : Base C : Collector E : Emitter SANYO : TO-126LP
Ratings 80 60 15 2 4 1.2 15
- 55 to +150
Unit V V V A A W W ˚C ˚C
Ratings min...
