C3807 Datasheet NPN Epitaxial Planar Silicon Transistor

Manufacturer: SANYO (now Panasonic)

Overview: .DataSheet.co.kr Ordering number:EN2018A NPN Epitaxial Planar Silicon Transistor 2SC3807 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications · Low frequency general-purpose amplifiers, drivers.

Datasheet Details

Part number	C3807
Manufacturer	SANYO (now Panasonic)
File Size	183.61 KB
Description	NPN Epitaxial Planar Silicon Transistor
Datasheet	C3807_SanyoSemiconDevice.pdf

Key Features

Large current capacity (IC=2A).
Adoption of MBIT process.
High DC current gain (hFE=800 to 3200).
Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).
High VEBO (VEBO≥15V). Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tc=25˚C.

More Datasheets from SANYO (now Panasonic)

Part Number	Description
C3860	PNP/NPN Epitaxial Planar Silicon Transistors
C3863	PNP/NPN Epitaxial Planar Silicon Transistors
C3895	NPN Triple Diffused Planar Silicon Transistor
C3897	NPN Triple Diffused Planar Silicon Transistor

Datasheet Details

Key Features

More Datasheets from SANYO (now Panasonic)

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