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FW907 - N-Channel and P-Channel Silicon MOSFETs

Key Features

  • ON-resistance Nch: RDS(on)1=13mΩ(typ. ), Pch: RDS(on)1=20mΩ(typ. ).
  • 4V drive.
  • N-channel MOSFET + P-channel MOSFET Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10s) Drain Current (PW≤100ms) Drain Current (PW≤10μs) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID ID ID IDP PD PT Tch Tstg Conditions Duty cycle≤1% D.

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Part Number Description
FW906 N-Channel and P-Channel Silicon MOSFETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA1810 FW907 SANYO Semiconductors DATA SHEET FW907 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • ON-resistance Nch: RDS(on)1=13mΩ(typ.), Pch: RDS(on)1=20mΩ(typ.) • 4V drive • N-channel MOSFET + P-channel MOSFET Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10s) Drain Current (PW≤100ms) Drain Current (PW≤10μs) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID ID ID IDP PD PT Tch Tstg Conditions Duty cycle≤1% Duty cycle≤1% Duty cycle≤1% When mounted on ceramic substrate (2000mm2×0.8mm) 1unit, PW≤10s When mounted on ceramic substrate (2000mm2×0.