TF410 fet equivalent, n-channel silicon junction fet.
* Ultrasmall package facilities miniaturization in end products : 1.0mm×0.6mm×0.27mm (max 0.3mm)
* Small IGSS : max --500pA (VGSS= --20V, VDS=0V)
* Small Ciss.
Applications
* Impedance conversion, infrared sensor applications
Features
* Ultrasmall package facilities mi.
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