TF410 Key Features
- Ultrasmall package facilities miniaturization in end products : 1.0mm×0.6mm×0.27mm (max 0.3mm)
- Small IGSS : max --500pA (VGSS= --20V, VDS=0V)
- Small Ciss : typ. 0.7pF (VDS= 10V, VGS=0V, f=1MHz)
- Halogen free pliance
TF410 is N-Channel Silicon Junction FET manufactured by SANYO.
| Manufacturer | Part Number | Description |
|---|---|---|
| TF410 | N-Channel JFET |
ENA2007 TF410 SANYO Semiconductors DATA SHEET TF410 N-Channel Silicon Junction FET Impedance Converter, Infrared Sensor Applications Applications Impedance conversion, infrared sensor applications.