TF410 - N-Channel JFET

onsemi

Key Features

Ultrasmall package facilities miniaturization in end products : 1.0mm×0.6mm×0.27mm (max 0.3mm).
Small IGSS : max --500pA (VGSS= --20V, VDS=0V).
Small Ciss : typ. 0.7pF (VDS= 10V, VGS=0V, f=1MHz).
Halogen free compliance Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature VDSS VGDS IG ID PD Tj Storage Temperature Tstg.

TF410 n-channel jfet by onsemi - Datasheet Preview

Datasheet Details

Part number	TF410
Manufacturer	onsemi
File Size	226.31 KB
Description	N-Channel JFET
Datasheet	TF410 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
TF410	N-Channel Silicon Junction FET	Sanyo
TF4-8B	Display Module	TINSHARP
TF40001A-V0	Standard LCD	TOPFOISON
TF440	Fast Switching Thyristor	Dynex Semiconductor
TF44014C	Fast Switching Thyristor	Dynex Semiconductor

Other Datasheets by onsemi

Part Number	Description
TF412	N-Channel JFT
TF412S	N-Channel JFET
TF414	N-Channel JFET
TF408	N-Channel JFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Ordering number : ENA2007A TF410 N-Channel JFET 40V, 50 to 130μA, 0.11mS, USFP http://onsemi.com Applications • Impedance conversion, infrared sensor applications Features • Ultrasmall package facilities miniaturization in end products : 1.0mm×0.6mm×0.27mm (max 0.3mm) • Small IGSS : max --500pA (VGSS= --20V, VDS=0V) • Small Ciss : typ. 0.7pF (VDS= 10V, VGS=0V, f=1MHz) • Halogen free compliance Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature VDSS VGDS IG ID PD Tj Storage Temperature Tstg Conditions Ratings 40 --40 10 1 30 150 --55 to +150 Unit V V mA mA mW °C °C Stresses exceeding Maximum Ratings may damage the device.