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TF410 - N-Channel Silicon Junction FET

Key Features

  • Ultrasmall package facilities miniaturization in end products : 1.0mm×0.6mm×0.27mm (max 0.3mm).
  • Small IGSS : max --500pA (VGSS= --20V, VDS=0V).
  • Small Ciss : typ. 0.7pF (VDS= 10V, VGS=0V, f=1MHz).
  • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSS VGDS IG ID PD Tj Tstg Con.

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Ordering number : ENA2007 TF410 SANYO Semiconductors DATA SHEET TF410 N-Channel Silicon Junction FET Impedance Converter, Infrared Sensor Applications Applications • Impedance conversion, infrared sensor applications Features • Ultrasmall package facilities miniaturization in end products : 1.0mm×0.6mm×0.27mm (max 0.3mm) • Small IGSS : max --500pA (VGSS= --20V, VDS=0V) • Small Ciss : typ. 0.7pF (VDS= 10V, VGS=0V, f=1MHz) • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSS VGDS IG ID PD Tj Tstg Conditions Ratings 40 --40 10 1 30 150 --55 to +150 Unit V V mA mA mW °C °C LOT No. LOT No.