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12A02SP - Low-Frequency General-Purpose Amplifier Applications

Features

  • Large current capacitance. Low collector-to-emitter saturation voltage (resistance). RCE (sat) typ. =285mΩ [IC=1A, IB=50mA]. Small ON-resistance (Ron). 0.4 0.5 0.6 0.4 1.8 15.0 3.0 0.4 1 2 1.3 0.7 3 1.3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Ordering number : ENN7485 12A02SP PNP Epitaxial Planar Silicon Transistors 12A02SP Low-Frequency General-Purpose Amplifier Applications Applications • Package Dimensions unit : mm 2033A [12A02SP] 4.0 2.2 Low-frequency Amplifier, high-speed switching, small motor drive, muting circuit. Features • • • Large current capacitance. Low collector-to-emitter saturation voltage (resistance). RCE (sat) typ.=285mΩ [IC=1A, IB=50mA]. Small ON-resistance (Ron). 0.4 0.5 0.6 0.4 1.8 15.0 3.0 0.4 1 2 1.3 0.7 3 1.
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