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12A02SS - Low-Frequency General-Purpose Amplifier Applications

Features

  • 0.8 0.3.
  • 1 0.45 0.2 2 Bottom View 0.07 0.07 1.4.
  • Large current capacitance. Low collector-to-emitter saturation voltage (resistance). RCE (sat) typ. =285mΩ [IC=1A, IB=50mA]. Ultrasmall package facilitates miniaturization in end products. Small ON-resistance (Ron). Top View 1.4 0.3 Side View 0.1 0.25 3 Side View 0.6 3 1 : Base 2 : Emitter 3 : Collector SANYO : SSFP 2 1 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Ordering number : ENN7486 12A02SS PNP Epitaxial Planar Silicon Transistors 12A02SS Low-Frequency General-Purpose Amplifier Applications Applications • Package Dimensions unit : mm 2159A [12A02SS] Low-frequency Amplifier, high-speed switching, small motor drive, muting circuit. Features • • 0.8 0.3 • 1 0.45 0.2 2 Bottom View 0.07 0.07 1.4 • Large current capacitance. Low collector-to-emitter saturation voltage (resistance). RCE (sat) typ.=285mΩ [IC=1A, IB=50mA]. Ultrasmall package facilitates miniaturization in end products. Small ON-resistance (Ron). Top View 1.4 0.3 Side View 0.1 0.25 3 Side View 0.
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