2SA1179N Datasheet | SANYO

Features - Miniature package facilitates miniaturization in end products. - High breakdown voltage. Specifications ( ) : 2SA1179N Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Electrical Characteristics at Ta=25°C Conditions Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Marking : 2SA1179N : M / 2SC2812N : L ICBO IEBO h FE f T Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO VCB=(--)35V, IE=0A VEB=(--)4V, IC=0A VCE=(--)6V, IC=(--)1m A 2SC2812N : VCE=6V, IC=1m A 2SA1179N : VCE=--6V, IC=--10m A VCB=(--)6V, f=1MHz IC=(--)50m A, IB=(--)5m A IC=(--)50m A, IB=(--)5m A IC=(--)10µA, IE=0A IC=(--)1m A, RBE=∞ IE=(--)10µA, IC=0A Ratings (--)55 (--)50 (--)5 (--)150 (--)300 (--)30 200 150 --55 to +150 Unit V V V m A m A m A m W °C °C Ratings min typ 200 100 (180) (4.0)3.0 (--0.15)0.1 (--)55 (--)50 (--)5 max (--)0.1 (--)0.1 400 (--)0.5 (--)1.0 Unit µA µA MHz MHz p F V V V V V - : The 2SA1179N / 2SC2812N are classified by 1m A h FE as follws: Rank 6 h FE 200 to 400 Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such...