LGE 2SA1179
PNP Transistor
| Part No. | 2SA1179 |
|---|---|
| Datasheet | 2SA1179 Download |
| Manufacturer |  LGE |
| Description | PNP Transistor |
| Buy | Stock & Price |
FEATURES
High breakdown voltage MARKING: MMAXIMUM RATINGS
(TA=25℃ unless otherwise noted) Symbol Parameter Value VCBO Collector-Base Voltage -55 VCEO Collector-Emitter Voltage -50 VEBO Emitter-Base Voltage -5 IC Collector Current -Continuous -150 Pc Collector Power Dissipation 200 TJ Junction Temperature 150 Tstg Storage Temperature -55-150 Units V V V mA mW ℃ ℃ Dimensions in inches and (millimeters)ELECTRICAL CHARACTERISTICS
(Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-10u A,IE=0 -55 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-10 u A,IC=0 -5 V Collector cut-off current ICBO VCB=-35V,IE=0 -0.1 u A Emitter cut-off current IEBO VEB=-4V,IC=0 -0.1 u A DC current gain hFE VCE=-6V,IC=-1mA 200 400 Collecto